Magnetic domain patterns in Co2MnGe Heusler nanostripes
نویسندگان
چکیده
منابع مشابه
Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions.
Fully epitaxial magnetic tunnel junctions (MTJs) with Co-based Heusler alloy Co(2)MnSi electrodes and a MgO tunnel barrier were fabricated with various values of Mn composition α for Co(2)Mn(α)Si in Co(2)Mn(α)Si/MgO/Co(2)Mn(α)Si MTJs. The tunnel magnetoresistance (TMR) ratios at both 4.2 K and room temperature (RT) increased systematically with increasing α in Co(2)Mn(α)Si electrodes from Mn-de...
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M. Belmeguenai,1,2 F. Zighem,1 Y. Roussigné,1 S-M. Chérif,1 P. Moch,1 K. Westerholt,3 G. Woltersdorf,2 and G. Bayreuther2 1LPMTM, Institut Galilée, UPR 9001 CNRS, Université Paris 13, 99 Avenue Jean-Baptiste Clément, F-93430 Villetaneuse, France 2Institut für Experimentelle Physik, Universität Regensburg, Universitätsstraße 31, 93040 Regensburg, Germany 3Institut für Experimentelle Physik/Festk...
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Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic ...
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Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO(x)) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.84.054456